CrSi2 crystallites on Si(110)

Abstract CrSi2 is an important refractory metal-silicide with high thermal power and a narrow bandgap which makes it a suitable material for high-temperature thermoelectric applications. The present work investigates the early stages of the growth of Cr film on Si(110) and its electronic properties by combining Scanning Tunneling Microscopy and Density Functional Theory. Cr atoms deposited on Si(110) formed grains of CrSi2 with interfacial dislocations along 1 2 〈 11 − 1 〉 Burgers vectors. After annealing at 1100°C, disconnected CrSi2 crystallites emerged. The crystallites had well-defined facets. Scanning tunneling spectroscopy measurements showed that the crystallites were metallic. Simulated DOS data of the facets also confirmed the metallic nature of the crystallites.