The effect of etching on Ge(111) surfaces and Pd Schottky contacts

The etch rates of various etches and the resulting morphology of the Ge (111) surface have been investigated using atomic force microscopy (AFM) techniques and the oxidation rate of the germanium after etching was monitored by ellipsometry. The effect of the etch on the stability of Pd Schottky barrier diodes (SBDs) was monitored over a period of time using current voltage measurements. It was found that those etches with high etch rates produced much rougher surfaces which in turn showed significant variation in the leakage currents of SBDs deposited on these surfaces. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)