Non-invasive nano-imaging of ion implanted and activated copper in silicon

Using vibrational imaging techniques including Fourier-transform infrared (FTIR) synchrotron microscopy,Raman microscopy, and scattering scanning near-field infrared microcscopy (s-SNIM), we mapped a sample of phosphor and copper ions implanted in a high-purity silicon wafer. While Raman microscopy monitors the structural disorder within the implantation fields, the aforementionedinfrared techniques provide a detailed picture of the distribution of the free carriers. On a large scale (tens of micrometers), we visualized the channeling effects of phosphordopants in silicon using FTIRmicroscopy. In comparison, using s-SNIM we were able to image, on a nanometer scale, local variations of the dielectric properties of the silicon substrate due to the activation of copperdopants.