Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications

Abstract In this chapter, we present an overview on the recent development of AlGaN and BN nanostructures by plasma-assisted molecular beam epitaxy and their emerging device applications. Efficient p-type conduction of AlN, that was previously difficult to achieve, has been made possible by exploiting N-rich epitaxy of AlN nanostructures. Studies have also shown that, due to the extreme quantum-confinement, monolayer GaN embedded in dislocation-free N-polar AlN nanocrystals can exhibit exciton binding energy larger than 200 meV, which rivals that of conventional two-dimensional transition metal dichalcogenides. Their promising device applications, including the realization of efficient Al(Ga)N UV-C LEDs and electrically pumped laser diodes operating in the UV-B and UV-C bands are also presented.