Preparation and electrical properties of (Zr,Sn)TiO{sub 4} dielectric thin films by laser ablation

(Zr,Sn)TiO{sub 4} is considered as a promising dielectric material for microwave devices owing to the temperature stability of capacitance and excellent microwave properties. Preferential (111)-oriented (Zr,Sn)TiO{sub 4} thin film was obtained by an ArF laser ablation. Properties of the crystallized film were as follows; the temperature coefficient of capacitance TCC was 17.6 ppm/C at 3 MHz and the dielectric constant {var_epsilon}{sub r}, 38 in the microwave range of 1GHZ--10GHz. It has turned out that the crystallization of this material is quite effective for improving dielectrical properties. Surface morphologies were observed by atomic force microscope (AFM). Grains grew on the crystallized film at 1 {micro}m x 1 {micro}m size.