Si growth on the Si(III)3x3R30-B surface phase depending on the type of surface phase formation and initial boron coverage

Reflection high energy electron diffusion (RHEED) is used to study the Si growth on a Si(111)(root)3X(root)3-B surface, prepared by various procedures. The analysis of RHEED patterns, specular beam intensity oscillations and dependencies of specular beam intensity on incidence angle (rocking curves), shows that the Si growth mode and epilayers quality depend on both an initial boron coverage and the way of (root)3X(root)3-B surface phase formation. Increase of transition temperature, at which Si growth mode converts from layer-by-layer to step-flow growth mode, is discussed in terms of the theory of surfactant-mediated growth on semiconductor surfaces.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.