MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaP Substrates

ZnSxSe1-x epitaxial layers have been grown on GaP (100) substrates by metalorganic chemical vapor deposition (MOCVD). The layer lattice-matched to the substrate shows a better surface morphology and a narrower line width of X-ray diffraction rocking curve.