MgZnO avalanche photodetectors realized in Schottky structures

MgZnO-based ultraviolet avalanche photodetectors (APDs) have been fabricated from Au/MgO/Mg0.44Zn0.56O/MgO/Au Schottky structures. The carrier avalanche multiplication is realized via an impact ionization process occurring in the MgO layer under relatively large electric field. The APDs exhibit an avalanche gain of 587 at 31 V bias, and the response speed of the APDs is in the order of microseconds. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)