Investigation of pMOS Device Matching and Characteristics Using B18H22 Implantation

Implantation of the molecular ion B18H22+ has significant productivity benefits since very high particle current densities are possible with a low electrical beam current. We evaluated several applications of B18H22 in sub‐70 nm DRAM manufacturing, including polysilicon doping, source/drain doping, and p+ contact resistance reduction. For p+ poly doping, the process control available from molecular implant is up to six times superior than that from plasma doping. We also characterized B18H22 in high dose implantation processes (p+ source/drain and p+ contact plug implantation) to improve the productivity of these steps.