Interaction in the HgTe-In system

The authors determine the character of physicochemical interaction in the HgTe-In system. The temperature dependence of the isobaric-isothermic potential and the equilibrium reaction constants were calculated. The phase equilibria in the HgTe-In system were investigated using the differential-thermal, x-ray phase, and microstructure analyses. It was found that immediately after the melting of indium a porous layer of indium monotelluride forms on the HgTe surface.