Application of Cluster Boron Implantation to pMOSFETs

We applied B18HX+ as an alternation of B+ or BF2+ to the implantation for source‐drain extension in pMOSFETs corresponding to various technology nodes from 65 nm to 28 nm. We could obtain identical or better characteristics compared to the cases of conventional ions. In addition, we found from blank wafer that larger impact damage to Si atoms in B18HX+ implantation leads to more advantageous Rs‐Xj in activation processing with only MSA.