A method for removing a film of silicon dendritic web

A.Process TO ELIMINATE THE FILM SILICON dendritic FABRIC B.Process CHARACTERIZED IN THAT IT INCLUDES HEATING SAID FABRIC AT A TEMPERATURE OF 800 TO 1200C IN THE PRESENCE OF OXYGEN THROUGH WHAT ONE COATING OF SILICON DIOXIDE IS FORMED ON SUCH FABRIC BELOW THAT FILM; AND DISPOSAL OF SAID COATING C.L'INVENTION CONCERNS A PROCESS FOR REMOVING THE FABRIC FILM SILICON dendritic.