High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers
2011
We present optical pulse generation with 100 W peak power, 3 ps temporal duration, and 1 GHz repetition from a
GaInN master oscillator power amplifier (MOPA). An external cavity GaInN laser diode is passively mode-locked to
generate 4 W peak power optical pulses as a master oscillator, and a semiconductor optical amplifier (SOA) effectively
amplified these to a high peak power of more than 100 W. Two major factors that contributed to effective amplification
of optical pulses were the generation of clean optical pulses without sub-pulse components by the GaInN mode-locked
laser diode and suppression of amplified spontaneous emission in the SOA. This novel high-peak-power pulse source is
used to induce multi-photon absorption to create sub-micrometer recording marks in a bulk plastic recording media. The
realization of an all-semiconductor pulse source is a significant breakthrough towards a practical 3D optical data storage
system.
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