The Energy State of Epitaxial Layers in a Multilayer Heterostructure, Grown on a (001)GaAs Substrate

It is shown based on the structural analysis by reciprocal space mapping and the experimental secondary ion mass spectrometry and transmission electron microscopy data that, along with lateral compressive stress, vertical compressive stress is induced in a multilayer epitaxial heterostructure with a metamorphic step-graded buffer. The reason for this stress is that interphase boundaries hinder complete stress removal at strain relaxation. The analysis carried out within the linear elasticity theory showed that the elastically strained state of the heterostructure layers is similar to the state arising during a two-stage deformation process (bulk and biaxial compression). It is shown that the free energy of the system in the metastable state is minimal in this case.