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SiC/SiO₂界面における窒素化学状態の結晶面方位依存性 (シリコン材料・デバイス)
SiC/SiO₂界面における窒素化学状態の結晶面方位依存性 (シリコン材料・デバイス)
2015
daisuke mori
kei inoue
hideaki teranisi
Keywords:
Nitrogen
Radiochemistry
X-ray photoelectron spectroscopy
Chemistry
Materials science
Analytical chemistry
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