A process for the preparation of a fin field-effect transistor

A process for producing a fin field effect transistor, characterized by: Forming a ridge (205); Forming a source region (210) at a first end of the web (205) and a drain region (215) at a second end of the web (205); Forming an oxide cap (222) on upper surfaces of the web (205) of the source region (210) and the drain region (215); Forming a layer (305) of sacrificial oxide on the web (205), the source region (210) and the drain region (215) after forming the oxide cap (220); Removing the layer (305) of sacrificial oxide to remove defects from surfaces of the web (205); Forming a dummy gate (505) having a first semiconducting material of a first pattern over the fin (205); Forming a dielectric layer (605) around the dummy gate (505) around; Removal to obtain a trench (705) in the dielectric layer (605) corresponding to the first pattern of the first semi-conductive material; Thin a portion of the web ...