Analysis of transient behavior of AlGaN/GaN MOSHFET

Abstract The threshold voltage of HfO 2 /AlGaN/GaN MOSHFETs was dependent on the time after the bias stress and the transconductance decreased at large gate voltages. These behaviors were explained based on the two-dimensional device simulation assuming three trap levels of E C  −  E T  = 0.4, 0.765, 1.65 eV with short, medium and long time constants at the HfO 2 /AlGaN interface, which were obtained based on the analytical consideration of the experimental results.