Improve the method that island photoresist peels off

The invention discloses a kind of method improved island photoresist and peel off, comprise step: 1) at the negative photoresist of liner oxidation film surface coating, carry out exposure development by reticle; 2) substrate is etched; 3) negative photoresist is removed; 4) at substrate surface coating positive photoetching rubber, exposure development is carried out by same reticle.The method can improve the stability of semiconductor fabrication process and the reliability of device.Before carrying out conventional island photoetching, first carry out negative-working photoresist by same reticle and oppositely etch, a groove is etched in island areas, so, when carrying out follow-up island photoetching, part photoresist will be embedded in substrate, thus adds the adhesion of photoresist and substrate, and island photoresist is not easily peeled off in follow-up semiconductor technology.