InP MESFET Grown by MOCVD

MESFET devices with 2 µm gate length have been fabricated on InP epitaxial layers grown by the MOCVD technique on Fe-doped semi-insulating InP substrates. The best electrical properties of InP epitaxial films have been measured and are n=2.7×1015 cm-3 and µ=3500 cm2/Vs at room temperature. The barrier height and the ideality factor of Au-n InP Schottky diode were estimated to be 0.66 eV and 1.18, respectively. Depletion mode n-channel MESFET has shown transconductance of ~90 mS/mm and the saturation drain current of ~20 mA at zero gate bias.