Photoetching of III/V semiconductors

Abstract The dependence of the capacitance—potential plots and of the photocurrent—potential plots of n-GaAs(100) and p-GaAs(100) interfaces in sulfuric acid on the hydrogen peroxide concentration was investigated. Simultaneously, in situ Raman spectroscopy was applied. The mechanism of the photodissolution derived from the investigation suggests an intermediate formation of an As 2 O 3 layer parallel to the dissolution of Ga 3+ ions.