Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD: Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD

SiC films were deposited on the surface of single crystal Si(100) and polycrystalline Cu by plasma enhanced chemical vapor deposition (PECVD). The effect of substrate temperature on the composition, structure and growth rate of as-deposited films was studied by high resolution transmission electron microscope (HRTEM), X-ray photoelectron spectroscope (XPS) and scanning electron microscope (SEM). The results showed that the as-deposited films were amorphous and the growth rate of films decreased with increasing substrate temperature from 60 degrees C to 500 degrees C. In addition, the growth rate of films deposited on the Si(100) wafer was higher than ones deposited on the polycrystalline Cu under the same deposition conditions. Meanwhile, it was found that the Si/C ratio of films decreased with the increase of substrate temperature. When the substrate temperature was controlled at about 350 degrees C, the Si/C ratio in film was nearly equal to 1:1.