Old Web
English
Sign In
Acemap
>
Paper
>
Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application
Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application
2020
Tsutsumi Takuya
Sugiyama Hiroki
Hamada Hiroshi
Nosaka Hideyuki
Matsuzaki Hideaki
Keywords:
Fabrication
Optoelectronics
Indium phosphide
Extremely high frequency
High-electron-mobility transistor
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]