Atomic layer deposited Hf0.5Zr0.5O2-based flexible RRAM

Hf 0.5 Zr 0.5 O 2 (HZO) — based flexible RRAM was fabricated by low-temperature atomic layer deposition (ALD) process. The resistive switching (RS) characteristics were improved by the stacked structure (Ag/HZO/Al 2 O 3 /ITO/PET). ON/OFF ratio was increased from 10 2 to 10 6 and the values of the set voltage (from 0.5∼2.5V to 0.1∼1V) and reset voltage (from −0.8∼-2V to −0.1∼-0.8V) were reduced and more uniform, which should be linked to the regulation of added Al 2 O 3 film. This study provides a promising candidate for flexible memory devices and wearable electronics.