Influence of drain and substrate bias on the TID effect for deep submicron technology devices

This paper presents a study of the total ionization effects of a 0.18μm technology.The electrical parameters of NMOSFETs were monitored before and after irradiation with60Co at several dose levels under different drain and substrate biases.Key parameters such as off-state leakage current and threshold voltage shift were studied to reflect the ionizing radiation tolerance,and explained using a parasitic transistors model.3D device simulation was conducted to provide a better understanding of the dependence of device characteristics on drain and substrate biases.