STUDY OF (As2Se3)100-X(AgI)X THIN FILMS PREPARED BY PLD AND VTE METHODS

Amorphous chalcogenide (As2Se3)100-x(AgI)x thin films with x = 5, 10, 15, 20, 25, 30 and 35 mol % have been deposited by pulsed laser deposition (PLD) and vacuum thermal evaporation (VTE). The films were characterized by various techniques with respect to their structure, composi- tion and morphology. The optical properties were studied by transmission spectroscopy; the optical band gap Eg was determined from Tauc plots and as Eg 04 in the strong absorption region (by α ≥10 4 cm −1 ) from the relation- ship α  (hν). The variation of the band gap is discussed with respect to the influence of the AgI content and the methods of film preparation.