Characteristics of the Thick-Film Capacitor Using Pb(Mg1/3Nb2/3)O3-Ba(Ti0.9Zr0.1)O3

Some properties of a thick-film capacitor which is fabricated through a conventional thick-film processing technique in nitrogen atmosphere are investigated. Pb(Mg1/3Nb2/3)O3 and Ba(Ti0.9Zr0.1)O3, each of which shows different temperature dependence of the dielectric constant according to their Curie points, are employed as dielectric materials for the purpose of obtaining specific properties of the capacitor. Addition of PbO2 as a sintering aid makes it possible for both crystalline phases to coexist in the dielectric layer with no mutual reaction. The temperature dependence of the dielectric constant as a function of composition, the microstructure and the distribution of elements are studied. As a result, it is proved that the mix sintering method is successfully applicable to the temperature dependence of a thick-film capacitor with various properties.