Optical and electrical characterization of transparent Ga‐doped ZnO thin films grown by atmospheric spray pyrolysis using diethylzinc solution

Non-doped and Ga-doped ZnO film on glass substrate were successfully grown at 150 °C by conventional atmospheric spray pyrolysis using diethylzinc-based solution. The samples had an average optical transmittance of more than 80% and were strongly a-axis orientated according to the results of optical transmittance and X-ray diffraction analysis, respectively. The n-type Ga-doped ZnO films had a low resistivity of 2.3 × 10–3 Ωcm, a carrier concentration of 1.1 × 1020 cm–3 and a mobility of 10 cm2 (Vs)–1 at an optimal Ga content of 2 at% upon UV irradiation. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)