Si — SiO2 Interfaces — a Hrtem Study

A High Resolution Transmission Electron Microscopy (HRTEM) study of the Si — SiO2 interfaces is reported here. The study has been carried out on the thermal oxidation of (a). Si and (b). Ge implanted Si. Evolution of the Si-SiO2 interface with oxide thickness and the presence of small amounts of Ge, i.e., one mono-layer at the interface and its influence on the oxidation kinetics is discussed.