Quantum interference effects in highly doped N-ZnSe epitaxy layers grown by MBE

Magnetotransport investigations of quantum interference effects at temperatures down to 0.35 K in a series of highly n-doped MBE-grown ZnSe epitaxy layers with electron densities from 8.2 x 10 17 to 7.5 x 10 18 cm -3 are presented. We observed a negative magnetoresistance in all samples studied. The change of magnetoconductivy Δσ xx (B) shows a linear dependence on the square root of the magnetic field. The slope of the √B dependence approaches the universal value predicted by weak localization (WL) theory when the temperature is reduced to 0.35 K and the electron density is well on the metallic side of the metal-insulator transition (MIT). The temperature exponent of the estimated phase coherence time τ φ is around unity.