Homogeneity of InGaAsfinP Nanostructures

Atomic-jorce microscopy is applied to wet-chemically etched cleaved facets of InGaAdInP nanoheterostructures. This technique allows the precise determination of process parameters relevant to advanced quantum devices realized by metal-organic vapor-phase epitaxy (MOVPE). We present data on thickness homogeneity and growth rates. We give evidence for the high quality of InGaAdInP nanostructures grown by MOVPE.