1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers with a detuned second-order grating

ABSTRACT Single-frequency grating outcoupled surface emitting (GSE) semiconductor lasers emitting at 1310 nm withoutput powers exceeding 5.25 mW into a multi-mode “ber, threshold currents below 13 mA and with > 30 dBside-mode suppression ratios are reported. These lasers consist of a 400 µ m long horizontal cavity, and a 15µ m long second-order outcoupler grating sandwiched between 200 µ m long “rst-order distributed Bragg re”ector(DBRs) gratings. Higher output powers can be achieved with longer outcoupler gratings. These GSE lasersoperate at 3.125 Gbps and have a full-width at half-maximum (FWHM) beam divergence of 5 x 12 degrees.Keywords: Surface emission, grating, long wavelength, distributed Bragg re”ector 1. INTRODUCTION Desirable traits of grating-outcoupled surface-emitting (GSE) lasers include narrow beam divergence, singlewavelength emission, high output power, 1 low voltage and stable polarization. 1310-nm GSE lasers are suitablefor free-space communication, night vision, laser radar, in addition to datacom, telecom, optical interconnects,printing and pumping applications.