Defect in amorphous silicon prepared by ion implantation

Amorphization and structural relaxation in Si‐implanted Si has been studied using slow positrons and Raman spectroscopy. The S parameter in the defect region decreases slightly with the annealing temperature. However, no significant change of S parameter was observed with 200 °C and 450 °C isothermal annealing. One interesting point is that S parameter holds lower value in the amorphized region, but such a behavior cannot be observed by the W parameter. The change of TO peak half width in the Raman spectra (480 cm−1) was found to correlate with the change of S parameter. The defect configuration is expected to alter during isothermal annealing.