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Self-aligned Si-Zn Diffusion For Impurity-induced Disordering Lasers: Extremely Low Threshold And High Yield
Self-aligned Si-Zn Diffusion For Impurity-induced Disordering Lasers: Extremely Low Threshold And High Yield
1991
W. X. Zou
J. L. Merz
R.J. Fu
C. S. Hong
Keywords:
Optoelectronics
Leakage (electronics)
Laser
Impurity
Physics
Electron
threshold current
Materials science
Etching
Correction
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