Epitaxial growth of metallic ErP, ErSb and lattice-matched ErP/sub x/Sb/sub (1-x)/ layers on
1989
ErP and ErSb compounds have been demonstrated to have metallic behaviour (ρErP = 150 µΩcm; ρErSb = 60 µΩcm). We show that they can be epitaxially grown on InP and GaAs in an MBE system and that many matched systems (metallic layer)/(III-V semiconductor) can be built using ternary compounds of rare-earth and V elements.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
2
References
35
Citations
NaN
KQI