Temperature-dependent photoluminescence of the InAs-based and GaSb-based type-II superlattices

Abstract In this paper, we studied the optical properties of the InAs/GaSb type-II superlattice grown on InAs and GaSb substrates by temperature-dependent photoluminescence measurement from 78 K to 220 K. The PL peak wavelengths of both superlattices are gradually red-shifted and the full width at half maximum (FWHM) broadened with increasing temperature. In comparison, the FWHM of the InAs-based superlattice is narrower and less sensitive to temperature than the GaSb-based one for superlattices of similar wavelength. In addition, the integral intensity of InAs-based superlattice is almost twice that of GaSb-based one for superlattices of similar wavelength at 78 K. The thermal quenching of PL intensity of all superlattices has been analyzed by a dual-channel non-radiative recombination Arrhenius model.