A Novel Structure of a-Si:H Based Photoconductor Stacked on APS Technology

In this paper, we present the characterization of a-Si:H based Photoconductor stacked on Active Pixel with Shield Gate (SG) technology to avoid electrical cross-talk current across pixels. The pixel area consists of a p-i-n layer as photo detector, and a newly proposed SG electrode thereby providing a high potential barrier between two pixels. The simulation and measurement results demonstrate that cross-talk can be suppressed by the barrier for electrons for this proposed pixel. Moreover, in order to realize the influence of pixel's geography, different i-layer thickness was studied in this work. By simulation result, thicker i-layer would be larger absorption that will bring the high sensitivity of pixel, though it is trading off with cross-talk.