PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs 1-x P x :N

The photoluminescence of GaAs 0.15 P 0.85 : N has been investigated under hydrostatic pressure at 77 K. The NN1 emission is clearly seen when P>10kbar. Meanwhile, luminescence quenching and band narrowing of N x line have been observed under pressure. The results show that the pressure effectively enhances the N x →NN 1 thermally assisted exciton transfer processes. The pressure behaviors of N x and NN 1 levels have been analysed and fitted to a theoretical model. The pressure coefficients of the levels and some parameters related to their wavefunctions have been determined by fitting calculations.