Defect-free thin InAs nanowires grown using molecular beam epitaxy
2016
In this study, we designed a simple method to achieve the growth of defect-free thin InAs nanowires with a lateral dimension well below their Bohr radius on different substrate orientations. By depositing and annealing a thin layer of Au thin film on a (100) substrate surface, we have achieved the growth of defect-free uniform-sized thin InAs nanowires. This study provides a strategy to achieve the growth of pure defect-free thin nanowires.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
46
References
10
Citations
NaN
KQI