GaN light emitting device on ZnO-GaN composite substrate and its preparing method

The present invention belongs to the field of semiconductor light emitting device and its manufacture technology, and is one kind of light emitting GaN device on composite ZnO-GaN substrate and its manufacture process. The GaN device consists of substrate, GaN buffering layer, lower n-GaN limit layer, multiple quantum well active InGaN layer, upper p-GaN limit layer, p-GaN cover layer, etc. The composite substrate consists of monocrystal ZnO substrate, upper coating GaN layer and anticorrosive lower coating layer, and between the substrate and the GaN buffering layer, there are also one stripping ZnO layer and one anti-composing GaN layer grown. The present invention has raised the quality of the GaN device film material, improve characteristic of the light emitting device, makes the stripping of device film material from the substrate, and can reuse the composite substrate to lower the cost of the device.