DC Bias Method for a-Si:H Deposition on a Dielectric Substrate Using Electron Cyclotron Resonance Plasma

A new DC bias method applicable to a-Si:H deposition on the dielectric substrate using an electron cyclotron resonance (ECR) plasma is investigated. A reactor consists of an ECR chamber and a deposition chamber, where a DC bias voltage is applied to a substrate holder against a grounded mesh set between two chambers. The optimum bias voltage exists in the positive region, and the highly photosensitive a-Si:H is deposited on the glass substrate.