A High Frequency Low Profile OLED Driver Based on GaN HEMTs

In this paper, a high frequency OLED driver circuit is proposed. Without choke inductors, the profile of the driver can be greatly reduced. Class Φ 2 inverter is used to reduce the voltage stress of the switch while maintaining soft switching characteristics. The T-type network maintains a constant current output over a wide load range while the reflected impedance remains resistive. A 48V input 150mA output prototype based on GaN HEMTs was built to verify the feasibility of the proposed OLED driver circuit.