Applications of ZnO-based glass membranes to mos devices

Abstract The characteristics of capacitance and voltage (C-V) curves in P -channel polycrystalline silicon field effect transistors (FETs), passivated by BaF 2 and ZnF 2 containing ZnOB 2 O 3 SiO 2 Al 2 O 3 P 2 O 5 glass with various OH − ion content, were investigated. When the OH − ion absorption coefficients in the glass increased, there was an adverse effect on the hysteresis C-V curve shifts. The content of ZnO replaced by the content of BaF 2 in ZnOB 2 O 3 SiO 2 Al 2 O 3 P 2 O 5 glass, had an affinity for OH − ions. Source-drain current and voltage (I-V) characteristics of both the typical enhancement and depletion mode field effect transistors, passivated and rounded at 750°C by these glass membranes, were confirmed.