Wet stripping method of the antireflection film layer

A silicon-containing antireflection film (SiARC) material provided on the substrate. SiARC material contains a base polymer, it may contain boron silicate polymers containing silsesquioxane. First wet etching using a basic solution, a series of etching including third wet etching using the second wet etching and another basic solution using an acid solution is used. The first wet etching can be used to decompose the boron silicate polymer, the second wet etch may remove the base polymer material, the third wet etch removes residual boron silicate polymers and other residual materials can do. The SiARC material can be removed from the substrate using a series of etching, the substrate obtained can be reused for monitoring. .Field