Tunable microwave absorption properties of B-doped SiC nanopowders prepared by arc-discharge method

In this study, we adopted a simple strategy of the arc discharge to prepare the B-doped SiC microwave nano-absorbers. Herein, the amorphous boron was selected as a doping B element source to tune the electromagnetic parameters of the SiC nanopowders. The experimental results indicate that the doping B in the SiC can conveniently tailor the microwave absorption capability of the SiC nanopowders. The appropriate doping B in the SiC can contribute to excellent synergistic effects among its defect dipoles, leakage, and magnetism. Among the doped SiC with B doping content of 0, 5, 10, and 15 at.%, the SiC with doping B content of 10 at.% acquired the optimized impedance matching and enhanced microwave absorption properties. And the optimal reflection loss (RL) value − 51.2 dB at 6.76 GHz with a matching thickness of 2.9 mm is acquired. The RL of the B-doped SiC nanopowders with B doping content of 10 at.% exceeding − 10 dB is about 3–5 times those of the other three samples in the ranges of 1–18 GHz at a matching thickness of 1.2–6.0 mm. Therefore, this work provided a feasible way to tune the microwave absorption properties of the B-doped SiC, which is of great significance to improve SiC-based high-temperature dielectric ceramics of microwave absorption performances by the defect-engineering strategy.