Coherent Manipulation of Holes in Dipole Trap Arrays

We investigate single-occupancy dipole trap arrays loaded with a gas of either fermions or bosons presenting some isolated defects consisting in empty sites, i.e., holes. The tunneling interaction between neighboring sites is used to prepare multi-site dark states for the holes allowing for the coherent manipulation of their external degrees of freedom. By means of an ab initio integration of the Schr\"odinger equation, we investigate the adiabatic transport of holes between the two extreme traps of a triple-well potential as well as the preparation of a defect-free trap domain. Furthermore, a quantum-trajectory approach based on the de Broglie--Bohm formulation of quantum mechanics is used to get detailed physical insight into the transport process. We extend the previous results to a single hole in a dipole trap array of arbitrary length by means of the Hubbard model, where hole creation and annihilation operators are introduced. Finally, we discuss the use of the hole for the construction of a coherent single hole diode and a coherent single hole transistor.