Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping
2014
We report scaled Ge p-channel FinFETs fabricated on a 300-mm Si wafer using the aspect-ratio-trapping technique. For long-channel devices, a combination of a trap-assisted tunneling and a band-to-band tunneling leakage mechanism is responsible for an elevated bulk current limiting the OFF-state drain current. However, the latter can be mitigated by device design. We report low long-channel subthreshold swing of 76 mV/decade at V DS =-0.5 V, good short-channel effect control, and high transconductance (g m =1.2 mS/μm at V DS =-1 V and 1.05 mS/μm at V DS =-0.5 V for L G =70 nm). The Ge FinFET presented in this paper exhibits the highest gm/SSsat at VDD=1 V reported for nonplanar unstrained Ge p-FETs to date.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
29
References
47
Citations
NaN
KQI