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Gas‐phase chemistry and reactive‐ion etching kinetics for silicon‐based materials in C 4 F 8 + O 2 + Ar plasma
Gas‐phase chemistry and reactive‐ion etching kinetics for silicon‐based materials in C 4 F 8 + O 2 + Ar plasma
2021
Byung Jun Lee
Alexander Efremov
Kwang-Ho Kwon
Keywords:
Reactive-ion etching
Chemistry
C-4
Plasma
Kinetics
Inorganic chemistry
gas phase
silicon based
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