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Acemap > Paper > Charge Trapping Memory Characteristics of p-Si/Ultrathin Al2O3 ∕ ( HfO2 ) 0.8 ( Al2O3 ) 0.2 ∕ Al2O3/Metal Multilayer Structure

Charge Trapping Memory Characteristics of p-Si/Ultrathin Al2O3 ∕ ( HfO2 ) 0.8 ( Al2O3 ) 0.2 ∕ Al2O3/Metal Multilayer Structure

2011 
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