Engineering and Stack Optimization of Cu -Based Selector Devices for Low Power SCM Applications

In this paper we demonstrate a unipolar selector based on Cu-based active layer. Volatile conductive bridge concept is explained by the means of electrical results and material properties such as device area, Cu-based active layer -thickness and composition. Beside the standard stack, the integration of a thin interfacial layer of 1nm metal oxide allows to improve VCB nonlinearity up to 6 decades, by decreasing initial current leakage to 1nA and switching V to 2.5V/1μs. Good endurance behavior is shown with more than 1E5 cycles obtained without degradation. Good switching temperature stability is demonstrated up to 125oC for both standard and HfO2/Cu-based stacks.