Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Interfacial Si suboxides (SiOx, x 500 °C initially there is a rapid segregation into amorphous Si (a-Si) surrounded by a SiO2 shell which acts as a diffusion barrier decelerating the reaction. Phenomenological modeling of kinetics with a one-dimensional Avrami–Erofe’ve treatment gives an upper limit for a-Si lateral growth rates of 1.2 A/s at 900 °C with an activation energy of 120 kJ/mol. PL, Raman, transmission electron microscopy and ellipsometry confirm this segregation model in the amorphous state. Due to the ra...